power mosfet irf630, sihf630 features ? dynamic dv/dt rating ? repetitive avalanche rated ?fast switching ? ease of paralleling ? simple drive requirements ? compliant to rohs directive 2002/95/ec description third generation power mosfets from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance thro ughout the industry. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 4.6 mh, r g = 25 ? , i as = 9.0 a (see fig. 12). c. i sd ? 9.0 a, di/dt ? 120 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. product summary v ds (v) 200 r ds(on) ( ? )v gs = 10 v 0.40 q g (max.) (nc) 43 q gs (nc) 7.0 q gd (nc) 23 configuration single n-channel mosfet g d s to-220ab g d s available rohs* compliant ordering information package to-220ab lead (pb)-free irf630pbf SIHF630-E3 snpb irf630 sihf630 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 200 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 9.0 a t c = 100 c 5.7 pulsed drain current a i dm 36 linear derating factor 0.59 w/c single pulse avalanche energy b e as 250 mj repetitive avalanche current a i ar 9.0 a repetitive avalanche energy a e ar 7.4 mj maximum power dissipation t c = 25 c p d 74 w peak diode recovery dv/dt c dv/dt 5.0 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com
irf630, sihf630 notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -1.7 specifications (t j = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 200 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma - 0.24 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 200 v, v gs = 0 v - - 25 a v ds = 160 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 5.4 a b - - 0.40 ? forward transconductance g fs v ds = 50 v, i d = 5.4 a 3.8 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 800 - pf output capacitance c oss - 240 - reverse transfer capacitance c rss -76- total gate charge q g v gs = 10 v i d = 5.9 a, v ds = 160 v, see fig. 6 and 13 b --43 nc gate-source charge q gs --7.0 gate-drain charge q gd --23 turn-on delay time t d(on) v dd = 100 v, i d = 5.9 a, r g = 12 ? , r d = 16 ? , see fig. 10 b -9.4- ns rise time t r -28- turn-off delay time t d(off) -39- fall time t f -20- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --9.0 a pulsed diode forward current a i sm --36 body diode voltage v sd t j = 25 c, i s = 9.0 a, v gs = 0 v b --2.0v body diode reverse recovery time t rr t j = 25 c, i f = 5.9 a, di/dt = 100 a/ ? s - 170 340 ns body diode reverse recovery charge q rr -1.12.2nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g www.kersemi.com
irf630, sihf630 typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 -typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-r esistance vs. temperature 91031_01 bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 25 c 4.5 v v ds , drain-to-source voltage (v) i d , drain current (a) 10 0 10 1 10 1 10 0 10 -1 10 -1 10 1 10 0 10 -1 10 0 10 1 v ds , drain-to-source voltage (v) i d , drain current (a) bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 150 c 91031_02 4.5 v 10 -1 20 s pulse width v ds = 50 v 10 1 10 0 10 -1 i d , drain current (a) v gs , gate-to-source voltage (v) 5678910 4 25 c 150 c 91031_03 i d = 5.9 a v gs = 10 v 3.0 0.0 0.5 1.0 1.5 2.0 2.5 t j , junction temperature ( c) r ds(on) , drain-to-source on resistance (normalized) 91031_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 www.kersemi.com
irf630, sihf630 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 1600 1200 800 0 400 10 0 10 1 capacitance (pf) v ds , drain-to-source voltage (v) c iss c rss c oss v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 91031_05 q g , total gate charge (nc) v gs , gate-to-source voltage (v) 20 16 12 8 0 4 0 10 50 40 30 20 for test circuit see figure 13 91031_06 i d = 5.9 a v ds = 160 v v ds = 40 v v ds = 100 v 10 1 10 0 v sd , source-to-drain voltage (v) i sd , reverse drain current (a) 0.5 1.3 1.1 0.9 0.7 25 c 150 c v gs = 0 v 91031_07 1.5 10 s 100 s 1 ms 10 ms operation in this area limited by r ds(on) v ds , drain-to-source voltage (v) i d , drain current (a) t c = 25 c t j = 150 c single pulse 10 3 10 2 0.1 2 5 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 10 2 25 10 3 25 10 4 91031_08 www.kersemi.com
irf630, sihf630 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms i d , drain current (a) t c , case temperature (c) 0 2 4 6 8 10 25 150 125 100 75 50 91031_09 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 10 1 0.1 10 -2 10 -5 10 -4 10 -3 10 -2 0.1 1 10 p dm t 1 t 2 t 1 , rectangular pulse duration (s) thermal response (z thjc ) notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal response) 0 ? 0.5 0.2 0.1 0.05 0.02 0.01 91031_11 r g i as 0.01 t p d.u.t. l v ds + - v dd a 10 v var y t p to obtain required i as i as v ds v dd v ds t p www.kersemi.com
irf630, sihf630 fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit 600 0 100 200 300 400 500 25 150 125 100 75 50 starting t j , junction temperature (c) e as , single pulse energy (mj) bottom to p i d 4.0 a 5.7 a 9.0 a v dd = 50 v 91031_12c q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + - www.kersemi.com
irf630, sihf630 fig. 14 - for n-channel p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd www.kersemi.com
to-220ab notes * m = 1.32 mm to 1.62 mm (dim ension including protrusion) heatsink hole for hvm ? xian and mingxin actual photo m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x12-0208-rev. n, 08-oct-12 dwg: 5471 www.kersemi.com
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